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Proceedings Paper

Layered semiconductor structures FTS diagnostics
Author(s): K. Boltar; Valeri A. Fedirko
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Paper Abstract

IR reflectance spectra of Si and GaAs/GaAlAs structures with as many as up to 5 surface layers have been measured. Model spectra have been constructed and compared with measured ones. The fitting procedure gives the layers thickness, the free charge carriers concentration and the mole fraction of AlAs in AlGaAs in each layer.

Paper Details

Date Published: 1 March 1992
PDF: 2 pages
Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56499
Show Author Affiliations
K. Boltar, MICROEL Research Ctr. (Russia)
Valeri A. Fedirko, MICROEL Research Ctr. (Russia)

Published in SPIE Proceedings Vol. 1575:
8th Intl Conf on Fourier Transform Spectroscopy
Herbert Michael Heise; Ernst Heiner Korte; Heinz W. Siesler, Editor(s)

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