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Proceedings Paper

FTIR characterization of epitaxial silicon layers
Author(s): J. A. Engelbrecht; R. L. Kleinhenz; R. A. Bendernagel
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Paper Abstract

FTIR reflectance spectroscopy was employed in an attempt to nondestructively determine the thickness as well as the dopant concentration of epitaxial silicon layers in p-/p+ structures on p-substrates.

Paper Details

Date Published: 1 March 1992
PDF: 2 pages
Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56481
Show Author Affiliations
J. A. Engelbrecht, Univ. of Port Elizabeth (South Africa)
R. L. Kleinhenz, IBM/East Fishkill Facility (United States)
R. A. Bendernagel, IBM/East Fishkill Facility (United States)


Published in SPIE Proceedings Vol. 1575:
8th Intl Conf on Fourier Transform Spectroscopy
Herbert Michael Heise; Ernst Heiner Korte; Heinz W. Siesler, Editor(s)

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