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Proceedings Paper

Crystal growth, characterization, and fabrication of AgGaSe2 crystals as novel material for room-temperature radiation detectors
Author(s): Utpal N. Roy; Michael Groza; Yunlong Cui; Arnold Burger; Zane W. Bell; Donald A. Carpenter
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Paper Abstract

Silver gallium diselenide (AgGaSe2) is a semiconductor compound having an energy bangap of 1.7 eV, a value that is favorable for the room temperature radiation detection application. The starting material was synthesized from high purity elemental starting materials: 5N purity Se, 6N purity Ag, and 7N purity Ga. The crystals were grown at 880 °C in a three-zone semi-transparent gold-coated horizontal furnace. High resistivity (1.4 x 1011 ohm-cm) material was obtained and radiation detectors were fabricated. The response to gamma and alpha particles will be reported along with an analysis of the mobility - trapping time product for this novel material.

Paper Details

Date Published: 21 October 2004
PDF: 4 pages
Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); doi: 10.1117/12.563890
Show Author Affiliations
Utpal N. Roy, Fisk Univ. (United States)
Michael Groza, Fisk Univ. (United States)
Yunlong Cui, Fisk Univ. (United States)
Arnold Burger, Fisk Univ. (United States)
Zane W. Bell, Oak Ridge National Lab. (United States)
Donald A. Carpenter, Y-12 National Security Complex (United States)


Published in SPIE Proceedings Vol. 5540:
Hard X-Ray and Gamma-Ray Detector Physics VI
Arnold Burger; Ralph B. James; Larry A. Franks, Editor(s)

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