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Proceedings Paper

Fourier transform spectroscopy semiconductor photodetectors peculiarity
Author(s): Vitaly I. Stafeev; K. O. Boltar; L. D. Saginov
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Paper Abstract

Using Fourier Transform Spectroscopy (FTS), we have measured HgCdTe diodes and resistors photoresponse at wavelengths below the fundamental absorption edge in this semiconductor. This study is inherent to FTS photoresponse and is performed by the long wavelength radiation modulation of the short wavelength photocurrent. Possible physical mechanisms of such modulation are discussed.

Paper Details

Date Published: 1 March 1992
PDF: 2 pages
Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56387
Show Author Affiliations
Vitaly I. Stafeev, Orion Research, Development, and Production Ctr. (Russia)
K. O. Boltar, Orion Research, Development, and Production Ctr. (Russia)
L. D. Saginov, Orion Research, Development, and Production Ctr. (Russia)


Published in SPIE Proceedings Vol. 1575:
8th Intl Conf on Fourier Transform Spectroscopy

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