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Proceedings Paper

Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy
Author(s): Shue-Chu Chen
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Paper Abstract

We report the comprehensive results obtained in our group in the investigation of impurity behavior in semiconductors by use of Fourier transform spectroscopy. We put emphasis in this paper on the electronic transitions of shallow impurities in ultrapure silicon. The new results reported here include the discovery and investigation of new shallow centers, the photothermal ionization spectroscopy of phosphorus in Si under high magnetic field, and the high sensitivity and resolution of PTIS as used for detection of shallow impurities in ultrapure silicon.

Paper Details

Date Published: 1 March 1992
PDF: 8 pages
Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56287
Show Author Affiliations
Shue-Chu Chen, National Lab. for Infrared Physics (China)


Published in SPIE Proceedings Vol. 1575:
8th Intl Conf on Fourier Transform Spectroscopy

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