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Proceedings Paper

CD uniformity improvement by loading effect correction (LEC) function for 90-nm reticle
Author(s): Colbert Lu; Torey Huang; Shone Lee
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Paper Abstract

The etching loading effect is always a big issue for mask maker to get excellent critical dimension (CD) uniformity. For etching process, with different loading area density the etching rate is different and then micro-loading issue exists. In accordance with the shrinking of patterns on ultra-large scale integration (ULSI), higher CD accuracy on photomask is required. For the 130nm technology node, the SPEC of CD uniformity range is about 17 ~ 22nm. At common poly layer, the distribution of pattern density is from 50% ~ 90%. The CD variation with different pattern density is 15 ~ 20nm. Besides adjusting the etching recipe to minimize the loading effect, we provide another solution. With loading effect correction (LEC) function on HL-950M, it offers a software method to calculate the pattern density and produce a dosage map to compensate the CD variation which is resulted from etching loading.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.562776
Show Author Affiliations
Colbert Lu, Photronics PSMC (Taiwan)
Torey Huang, Photronics PSMC (Taiwan)
Shone Lee, Photronics PSMC (Taiwan)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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