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Proceedings Paper

Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects
Author(s): Vladimir M. Borzdov; Vadim Galenchik; Oleg Zhevnyak; Fadei F. Komarov; A. Zyazulya
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Paper Abstract

The ensemble Monte Carlo algorithm for simulation of charge carrier transport in short channel MOSFET was developed. The mobile charge carrier concentration and electrostatic potential calculation procedures were worked out. The drain current increasing mechanisms caused by secondary holes transport in short channel MOSFET were considered. It was found out that at channel length about 0.1 μm the influence of secondary holes transport is quite significant.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562736
Show Author Affiliations
Vladimir M. Borzdov, Belorussian State Univ. (Belarus)
Vadim Galenchik, Belorussian State Univ. (Belarus)
Oleg Zhevnyak, Belorussian State Univ. (Belarus)
Fadei F. Komarov, Belorussian State Univ. (Belarus)
A. Zyazulya, Belorussian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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