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Proceedings Paper

A self-consistent modeling of the leakage current through thin oxides
Author(s): A. S. Arkhipov; E. A. Burovski; I. Ya. Polishchuk
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Paper Abstract

A simple computationally effective semi-analytical macroscopic technique of self-consistent calculations of the electrical properties of the MOS structures with ultra thin high-k gate oxide film is developed. Calculated gate voltage - gate leakage [substrate-injected direct and Fowler-Nordheim (FN) tunneling] and gate capacitance characteristics are presented and discussed. The Si/oxide band offset is shown to be the main parameter affecting leakage. The stepwise behaviour of the I - V characteristics is predicted. A contribution of the FN injection is discussed.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562733
Show Author Affiliations
A. S. Arkhipov, Russian Research Ctr. Kurchatov Institute (Russia)
Kinetic Technologies, Ltd. (Russia)
E. A. Burovski, Russian Research Ctr. Kurchatov Institute (Russia)
Kinetic Technologies, Ltd. (Russia)
I. Ya. Polishchuk, Russian Research Ctr. Kurchatov Institute (Russia)
Kinetic Technologies, Ltd. (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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