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Proceedings Paper

Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures
Author(s): Lev P. Avakyants; Pavel Y. Bokov; Anatoly V. Chervyakov; Galib B. Galiev; Evgeny A. Klimov
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Paper Abstract

The room temperature photoreflectance (PR) investigation of optical transitions in Al0.2Ga0.8As/GaAs/Al0.2Ga0.8As single and coupled quantum wells is presented. The structures were grown by molecular beam epitaxy for different barrier thickness and quantum well width. Three kinds of spectral features were observed in PR spectra: sharp line connected with GaAs band gap (1.42 eV), Frantz-Keldysh oscillations near Al0.2Ga0.8As band gap (1.71 eV) and features originated from electron-hole transitions in quantum well. The energies of observed transitions have been compared with the results of envelope function calculations.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562731
Show Author Affiliations
Lev P. Avakyants, M.V. Lomonosov Moscow State Univ. (Russia)
Pavel Y. Bokov, M.V. Lomonosov Moscow State Univ. (Russia)
Anatoly V. Chervyakov, M.V. Lomonosov Moscow State Univ. (Russia)
Galib B. Galiev, Institute of UHF Semiconductor Electronics (Russia)
Evgeny A. Klimov, Institute of UHF Semiconductor Electronics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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