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Proceedings Paper

The scanning single ion implanter for solid state quantum computer
Author(s): Valery A. Zhukov
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Paper Abstract

The scanning (step-and-repeat) and projective (simultaneous) methods of ion-optical implantations of single phosphorus 31P ions in hetero-structure Si/SixGe1-x are offered and analyzed with the purpose of formation of qubits of the solid-state quantum computer. Opportunities axial-symmetric electromagnetic objective lenses and existing sources of highly charged ions with reference to the given problem are considered. It is shown, that combined axial-symmetric electromagnetic lenses have advantage in comparison with electrostatic lenses. The combined electromagnetic objective having record small axial aberrations is designed. The optical scheme of scanning single ion implanter with such objective is offered. The critical parameters determining productivity of ion-optical implanter are allocated. They are the allowable lateral discrepancy of localization of implanted ions, a chromatic aberration of an objective, brightness of an ion source and the multiplicity of a charge of doped ions. The formula connecting these values is deduced. Requirements to sources of highly charged ions and the offer on search of new sources of highly charged ions and projective ion-optical schemes of single ion implantation are formulated.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562730
Show Author Affiliations
Valery A. Zhukov, St. Petersburg Institute for Informatics and Automation (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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