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Proceedings Paper

Tilted-axes YBCO thin films: from vicinal range to step bunching
Author(s): P. B. Mozhaev; J. E. Mozhaeva; I. K. Bdikin; T. Donchev; E. Mateev; T. Nurgaliev; C. S. Jacobsen; J. Bindslev Hansen; Sergei A. Zhgoon; A. E. Barinov
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Paper Abstract

Tilted-axes YBCO thin films were deposited on NdGaO3 (NGO) substrates with surface inclination from the standard (110) crystallographic plane. All deposited films were epitaxial with the (001) YBCO plane aligned with the {110} planes of the substrate. Structural and morphological studies revealed three angular ranges of the film formation: a small-angle “vicinal” range, where the films to not differ much from films deposited on (110) NGO; a high-angle range, characterized by “step bunching” during the thin film growth; and an intermediate range, providing very smooth films with the best crystal structure. Differences in film morphology and structure are probably due to an increasing density of seeding centers on the surface of tilted-axes substrate with an increase of inclination angle. The reason for the high-quality film formation in the intermediate range is probable the matching of the density of seeding centers and the diffusion length of the atoms on the surface. This model is corroborated by differences in the intermediate range angles for different deposition techniques. The intermediate range thin films showed also the best electrical properties (Tc, Jc(77 K), Rs(77K, 10 GHz).

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562724
Show Author Affiliations
P. B. Mozhaev, Institute of Physics and Technology (Russia)
J. E. Mozhaeva, Institute of Physics and Technology (Russia)
Technical Univ. of Denmark (Denmark)
I. K. Bdikin, Univ. of Aveiro (Portugal)
T. Donchev, Institute of Electronics (Bulgaria)
E. Mateev, Institute of Electronics (Bulgaria)
T. Nurgaliev, Institute of Electronics (Bulgaria)
C. S. Jacobsen, Technical Univ. of Denmark (Denmark)
J. Bindslev Hansen, Technical Univ. of Denmark (Denmark)
Sergei A. Zhgoon, Moscow Power Engineering Institute (Russia)
A. E. Barinov, Moscow Power Engineering Institute (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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