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Proceedings Paper

Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer
Author(s): Andrei A. Lomov; Mikhail A. Chuev; Galib B. Galiev
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Paper Abstract

Structural characteristics of semiconducting heterostructures AlGaAs/GaAs/AlGaAs containing either single quantum well or two quantum wells separated with a thin AlAs layer are estimated by means of the double-crystal X-ray diffractometry. It is found that an additional Si-doping of outer barrier layers results in the formation of abrupt (less than 2 nm) interfaces at quantum wells.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562710
Show Author Affiliations
Andrei A. Lomov, A.V. Shubnikov Institute of Crystallography (Russia)
Mikhail A. Chuev, Institute of Physics and Technology (Russia)
Galib B. Galiev, Institute of UHF Semiconductor Electronics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003

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