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Proceedings Paper

Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in the process of fabrication
Author(s): A. A. Belov; Yu. A. Efimov; Alexandr L. Karuzskii; Igor P. Kazakov; Yu. A. Mityagin; V. N. Murzin; Anatolii V. Perestoronin; A. A. Pishchulin; S. S. Shmelev
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Paper Abstract

Photoluminescence technique is developed for characterization of resonant-tunneling diode structures formed of the GaAs/AlGaAs long-period superlattices in process of fabrication, which allows to estimate quality of the fabricated structure after the main stages of the technological process, including the MBE growth of multi-layer structure, lithography and annealing. The long-period multiquantum-well structures are promising for development of a new kind of solid-state intersubband-transition devices emitting the narrow band radiation in far infrared. This PL technique permits the corrections of the technology parameters to grow the structures with required properties and high homogeneity and can be used at room temperature as well as at low temperature.

Paper Details

Date Published: 28 May 2004
PDF: 11 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562708
Show Author Affiliations
A. A. Belov, P.N. Lebedev Physical Institute (Russia)
Yu. A. Efimov, P.N. Lebedev Physical Institute (Russia)
Alexandr L. Karuzskii, P.N. Lebedev Physical Institute (Russia)
Igor P. Kazakov, P.N. Lebedev Physical Institute (Russia)
Yu. A. Mityagin, P.N. Lebedev Physical Institute (Russia)
V. N. Murzin, P.N. Lebedev Physical Institute (Russia)
Anatolii V. Perestoronin, P.N. Lebedev Physical Institute (Russia)
A. A. Pishchulin, P.N. Lebedev Physical Institute (Russia)
S. S. Shmelev, P.N. Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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