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Proceedings Paper

X-ray diagnostics of heterostructures with quantum dots
Author(s): S. N. Yakunin; E. M. Pashaev; A. A. Zaitsev; A. G. Sutyrin; V. G. Mokerov
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Paper Abstract

GaAs-based heterostructures containing the layers with InAs quantum dots were studied by high-resolution X-ray diffraction and reflectivity measurements. Their structural parameters were derived by theoretical analysis of the measured data. The parameters derived from the diffraction and reflectivity measurements agree well with one another, which indicates that structural data yielded by the combination of such measurements can well be deemed plausible.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562700
Show Author Affiliations
S. N. Yakunin, A.V. Shubnikov Institute of Crystallography (Russia)
E. M. Pashaev, A.V. Shubnikov Institute of Crystallography (Russia)
A. A. Zaitsev, Institute of Radio Engineering and Electronics (Russia)
A. G. Sutyrin, A.V. Shubnikov Institute of Crystallography (Russia)
V. G. Mokerov, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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