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Proceedings Paper

Modeling atomic hydrogen diffusion in GaAs
Author(s): Valerii A. Kagadei; E. Nefyodtsev
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Paper Abstract

The hydrogen diffusion model in GaAs in conditions of an intense flow of penetrating atoms has been developed. It is shown that the formation undersurface diffusion barrier layer from immobile interstitial molecules of hydrogen reduce probability of atoms penetration into crystal and rate of their diffusion in GaAs, and influence on the process of shallow- and/or deep-centers passivation. It is exhibited that the influence of diffusion barrier should be taken into account at optimum mode selection of GaAs structure hydrogenation.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562666
Show Author Affiliations
Valerii A. Kagadei, Research Institute of Semiconductor Devices (Russia)
E. Nefyodtsev, Institute of High Current Electronics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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