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Proceedings Paper

Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing
Author(s): Valerii A. Kagadei; Alexey B. Markov
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Paper Abstract

A model of non-equilibrium out-diffusion of dopant from ion-implanted layer at rapid thermal annealing has been offered. The model is based on supposition of dependence of out-diffusion activation energy on the non-equilibrium coefficient characterizing the system non-equilibrium state from the point of view of the ratio of components concentration.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562665
Show Author Affiliations
Valerii A. Kagadei, Research Institute of Semiconductor Devices (Russia)
Alexey B. Markov, Institute of High Current Electronics (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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