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Proceedings Paper

Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures
Author(s): Yu. A. Filimonov; A. S. Dzhumaliev; A. V. Kozhevnikov; S. L. Vysotsky
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Paper Abstract

Dependence of the easy magnetization axis switch and domain structure in Fe films grown on GaAs(100) substrates on the growth temperature TS and deposition rate υ was investigated. The easy magnetization axis direction was determined from ferromagnetic resonance measurements in tangentially magnetized Fe films. It was found for films grown at substrate temperature TS ≤;140°C that with decreasing films thickness t smaller some critical thickness t* the easy magnetization axis direction switches from [100] to [110] crystallographic axis while for films grown at substrates temperatures Ts>140°C the easy magnetization direction was along [100] axis at decreasing the film’s thickness down to 10 Å. The critical thickness t* of “switched” film nonmonotonically depends on the deposition rate and was determined at t* ≈ 21, 15 and 28 Å for deposition rates υ ≈1.4 ; 3 and 4 Å/min, respectively. Domain structures in FeGaAs(100) films are discussed.

Paper Details

Date Published: 28 May 2004
PDF: 5 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562664
Show Author Affiliations
Yu. A. Filimonov, Institute of Radio Engineering and Electronics (Russia)
A. S. Dzhumaliev, Institute of Radio Engineering and Electronics (Russia)
A. V. Kozhevnikov, Institute of Radio Engineering and Electronics (Russia)
S. L. Vysotsky, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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