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Proceedings Paper

Simulation of technological process of microstructures etching in high-voltage gas discharge plasma
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Paper Abstract

This paper suggests using directed flows of low-temperature plasma formed by high-voltage gas discharge to obtain micro and nanostructures on substrate surface. The algorithm and software have been developed which make it possible to automate the process of calculating optimal values of the process parameters by etching microstructures in high-voltage gas discharge plasma. The difference between the experimental results and design data obtained as a result of simulation amounted to less than 10 per cent when investigating the following materials: silicon, silicon dioxide, silicon carbide, diamond films.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562655
Show Author Affiliations
Nikolay L. Kazanskiy, Image Processing Systems Institute (Russia)
Vsevolod A. Kolpakov, Samara State Aerospace Univ. (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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