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Proceedings Paper

The influence of classical and quantum-mechanical regions interaction on IV-characteristics of RTD based on different materials
Author(s): I. I. Abramov; Igor A. Goncharenko; N. V. Kolomejtseva
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Paper Abstract

The effect of influence of different material parameters and structure design on IV-characteristic of RTD is considered in the paper. Special attention was paid to analysis of the interaction between classical and quantum-mechanical RTD regions. The combined numerical model of a resonant-tunneling diode, based on self-consistent solution of the Schroedinger and Poisson equations is presented. The interface charge was added to the Poisson equation and its approximation is also given. The simulation of IV-characteristics of RTD on In0.53Ga0.47As/AlAs and GaAs/AlAs was carried out by using the combined model and model modifications. As a confirmation of accuracy and adequacy of the proposed model there was achieved a good agreement between theoretical and experimental results. The effect of interface charge and sizes of the active regions on IV-characteristics of RTDs was also studied.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562647
Show Author Affiliations
I. I. Abramov, Belorussian State Univ. of Informatics and Radioelectronics (Belarus)
Igor A. Goncharenko, Belorussian State Univ. of Informatics and Radioelectronics (Belarus)
N. V. Kolomejtseva, Belorussian State Univ. of Informatics and Radioelectronics (Belarus)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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