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Proceedings Paper

Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells
Author(s): I. Lapushkin; A. Zakharova; S. T. Yen; K. A. Chao
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Paper Abstract

We investigate the subband dispersions in the InAs/GaSb quantum wells using Burt's envelope function theory and the scattering matrix method. The potential and carrier distributions as well as the level positions are derived by means of self-consistently solving the Schroedinger and the Poisson equations. The semimetal-semiconductor phase transitions have been obtained with the GaSb layer thickness decreasing and with increase of the bias voltage applied across the structure.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562646
Show Author Affiliations
I. Lapushkin, Institute of Physics and Technology (Russia)
A. Zakharova, Institute of Physics and Technology (Russia)
S. T. Yen, National Chiao Tung Univ. (Taiwan)
K. A. Chao, Lund Univ. (Sweden)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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