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Proceedings Paper

I-V modeling of current limiting mechanisms in HgCdTe FPA detectors
Author(s): Angelo Scotty Gilmore; James Bangs; Amanda Gerrish
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Paper Abstract

This paper details significant improvements in current-voltage (I-V) modeling capabilities using an automated iterative non-linear fitting program. The properties of a particular infrared (IR) detector's I-V curve are dependent upon the current limiting mechanisms in the device which depend upon the temperature, applied bias, and cutoff wavelength or detector bandgap. This model includes ideal diode diffusion, generation-recombination, band-to-band tunneling, trap-assisted tunneling, shunt resistance, and avalanche breakdown as potential current limiting mechanisms in an IR detector diode. The modeling presented herein allows one to easily distinguish, and more importantly to quantitatively compare, the amount of influence each current limiting mechanism has on various detector's I-V characteristics. Modeling of the trap-assisted-tunneling mechanism leads to an estimate of the density of occupied trap states at a given temperature. This model is now routinely applied to Raytheon Vision Systems’ test structures to better understand detector current limitations.

Paper Details

Date Published: 21 October 2004
PDF: 9 pages
Proc. SPIE 5563, Infrared Systems and Photoelectronic Technology, (21 October 2004); doi: 10.1117/12.562614
Show Author Affiliations
Angelo Scotty Gilmore, Raytheon Vision Systems (United States)
James Bangs, Raytheon Vision Systems (United States)
Amanda Gerrish, Raytheon Vision Systems (United States)

Published in SPIE Proceedings Vol. 5563:
Infrared Systems and Photoelectronic Technology
C. Bruce Johnson; Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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