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Proceedings Paper

Photonic band engineering in opals by growth of Si/Ge multilayer shells
Author(s): Florencio Garcia-Santamaria; Cefe Lopez; Francisco Meseguer; Paul V. Braun
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Paper Abstract

The optimization of the procedure to grow accurate amounts of amorphous silicon and germanium by chemical vapor deposition (CVD) free of contamination in opals has been performed. The samples have been optically characterized and results agree with theoretical calculations of band structures. Multilayer systems of both semiconductors have been fabricated. Samples have been optically characterized and observed with a scanning electron microscope. Selective removal of germanium with aqua regia has proven to be possible. Theoretical calculations show that subtle variations of the topography may give rise to important effects (flat bands, pseudogap openings, etc). As an example, a photonic band structure with a complete photonic band gap between the 5th and 6th band has been provided along with a method to obtain it. It would be impossible to discuss all the possible structures that could be obtained from samples with different number of layers and materials forming them. However, there are many interesting topographies that could be fabricated in a relatively straightforward manner following the techniques described here.

Paper Details

Date Published: 14 October 2004
PDF: 12 pages
Proc. SPIE 5511, Tuning the Optical Response of Photonic Bandgap Structures, (14 October 2004); doi: 10.1117/12.561733
Show Author Affiliations
Florencio Garcia-Santamaria, Univ. of Illinois/Urbana-Champaign (United States)
Cefe Lopez, Instituto de Ciencia de Materiales de Madrid (Spain)
Francisco Meseguer, Univ. Politecnica (Spain)
Paul V. Braun, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 5511:
Tuning the Optical Response of Photonic Bandgap Structures
Philippe M. Fauchet; Paul V. Braun, Editor(s)

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