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Proceedings Paper

Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications
Author(s): Ashok K. Sood; Elwood James Egerton; Yash R. Puri; Frederick W. Clarke; James C.M. Hwang; Amir Dabiran; Peter Chow; Tom Anderson; Avi Gupta; Andy Souzis; Ilya Zwieback
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Paper Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature elctronics applications that will replace GaAs and Silicon devices and circuits for commercial and military applications. AlGaN/ GaN based HEMT device structure shows significant potential to meet these needs. In this paper, we present a GaN/AlGaN based HEMT design with modeling results, that includes AlN buffer layer followed by AlGaN layers on lattice matched semi-insulating SiC substrates. These devices were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. Key to high quality HEMT structures is the ability to grow high quality AlN Buffer layers. Details of the electrical and optical characteristics of the HEMT layers and devices are presented and a short overview of semi-insulating SiC crystal growth is given.

Paper Details

Date Published: 20 October 2004
PDF: 15 pages
Proc. SPIE 5550, Free-Space Laser Communications IV, (20 October 2004); doi: 10.1117/12.561584
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Elwood James Egerton, Magnolia Optical Technologies, Inc. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Frederick W. Clarke, U.S. Army Space and Missile Defense Command (United States)
James C.M. Hwang, Lehigh Univ. (United States)
Amir Dabiran, SVT Associates, Inc. (United States)
Peter Chow, SVT Associates, Inc. (United States)
Tom Anderson, II-VI, Inc. (United States)
Avi Gupta, II-VI, Inc. (United States)
Andy Souzis, II-VI, Inc. (United States)
Ilya Zwieback, II-VI, Inc. (United States)


Published in SPIE Proceedings Vol. 5550:
Free-Space Laser Communications IV
Jennifer C. Ricklin; David G. Voelz, Editor(s)

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