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Proceedings Paper

Annealing behavior of vanadium oxide films prepared by modified ion-beam-enhanced deposition
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Paper Abstract

Different annealing conditions were adopted to anneal the vanadium oxide films prepared by modified Ion Beam Enhanced Deposition (IBED) method. An X-Ray Diffraction (XRD) was used to analyze the orientation of the IBED films and the resistance was tested with temperature change to measure the Temperature Coefficient of Resistance (TCR). Experiments indicated that there existed a critical temperature for crystallization of VO2, which changed with the different deposition conditions of the IBED method. It is very difficult to obtain VO2 structure if the annealing temperature was lower than the critical temperature. If the temperature is much higher than the critical temperature or annealing time is too long, the valence of vanadium in VO2 film will easily reduce from 4 to low value. The TCR of the IBED VO2 polycrystalline films annealed in appropriate condition could reach higher than 4%/K.

Paper Details

Date Published: 22 October 2004
PDF: 6 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.561411
Show Author Affiliations
Jinhua Li, Jiangsu Polytechnic Univ. (China)
Ningyi Yuan, Jiangsu Polytechnic Univ. (China)
Jiansheng Xie, Jiangsu Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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