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Proceedings Paper

The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method
Author(s): Ningyi Yuan; Jinhua Li; Ge Li
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Paper Abstract

The phase transition characteristic of the vanadium dioxide (VO2) film prepared by ion beam enhanced deposition (IBED) method was studied. The lattice distortion hypothesis was supposed to simulate resistance change of the VO2 polycrystalline film with temperature increasing and the simulation result was explained based on Landau theory. Due to the present of argon atom in interstitial site of VO2 lattice or grain boundary, the semiconductor- to-metal phase transition began at 48°C in some grains, obviously lower than the phase transition temperature of VO2 single crystal.

Paper Details

Date Published: 22 October 2004
PDF: 7 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.561406
Show Author Affiliations
Ningyi Yuan, Jiangsu Polytechnic Univ. (China)
National Lab. for Infrared Physics, CAS (China)
Jinhua Li, Jiangsu Polytechnic Univ. (China)
National Lab. for Infrared Physics, CAS (China)
Ge Li, Jiangsu Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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