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Proceedings Paper

Uncooled InAs photodiodes for optoelectronic sensors
Author(s): Grygoriy S. Oliynuk; Andriy V. Sukach; Vladimir V. Tetyorkin; Sergiy V. Stariy; Volodymyr I. Lukyanenko; Andriy T. Voroschenko
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Paper Abstract

InAs photodiodes were prepared by short-term cadmium diffusion into substrates with n-type conductivity. This preparation technique results in formation of p+-p-n-n+ diodes with compensated region embedded between two doped regions. Experimental data are explained by suppression of Auger recombination in active compensated region. Electrical and photoelectrical properties of photodiodes were investigated in the temperature range 77-295 K. It is shown that the total dark current is determined by the diffusion carrier transport mechanism. The diffused photodiodes exhibit higher photosensitivity in the short wavelength region due to presence of built-in electric field at the surface. Their threshold parameters are found to be approximately the same as in commercially available photodiodes.

Paper Details

Date Published: 22 October 2004
PDF: 9 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.561401
Show Author Affiliations
Grygoriy S. Oliynuk, Institute of Semiconductor Physics (Ukraine)
Andriy V. Sukach, Institute of Semiconductor Physics (Ukraine)
Vladimir V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
Sergiy V. Stariy, Institute of Semiconductor Physics (Ukraine)
Volodymyr I. Lukyanenko, Institute of Semiconductor Physics (Ukraine)
Andriy T. Voroschenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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