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Proceedings Paper

Thermal donors removing in silicon single-crystal wafers
Author(s): Jiri Lunacek; Daniel Kuchar; Michal Lesnak
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Paper Abstract

The paper solves the optimization problem of thermal donors (TD) removing in Si-single crystal wafers produced in the TEROSIL company. TD are removed during subsequent annealing process by temperature 620°C and time 20 min. Amount of the residual TD is determined by electrical resistivity measurement. The first results indicate possibility to modify the annealing process in order to increase its effectiveness.

Paper Details

Date Published: 7 April 2004
PDF: 3 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560668
Show Author Affiliations
Jiri Lunacek, Technical Univ. of Ostrava (Czech Republic)
Daniel Kuchar, Technical Univ. of Ostrava (Czech Republic)
Michal Lesnak, Technical Univ. of Ostrava (Czech Republic)

Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

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