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Proceedings Paper

Properties of erbium-doped gallium nitride films prepared by RF magnetron sputtering
Author(s): Vaclav Prajzler; Ivan Huttel; Vratislav Perina; Josef Schrofel; Jarmila Spirkova; Jiri Oswald; Vaclav Studnicka; Miroslava Novotna
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Paper Abstract

We report on fabrication of the GaN layers deposited onto silicon, silica-on-silicon and quartz glass substrates by RF magnetron sputtering. The GaN layers were also doped with erbium ions to achieve active optical properties. The fabricated layers were characterized by a number of methods and the results are discussed on the bases of quality of the deposited GaN structures.

Paper Details

Date Published: 7 April 2004
PDF: 4 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560666
Show Author Affiliations
Vaclav Prajzler, Czech Technical Univ. (Czech Republic)
Ivan Huttel, Institute of Chemical Technology (Czech Republic)
Vratislav Perina, Nuclear Physics Institute (Czech Republic)
Josef Schrofel, Czech Technical Univ. (Czech Republic)
Jarmila Spirkova, Institute of Chemical Technology (Czech Republic)
Jiri Oswald, Institute of Physics (Czech Republic)
Vaclav Studnicka, Institute of Physics (Czech Republic)
Miroslava Novotna, Institute of Chemical Technology (Czech Republic)


Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

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