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Proceedings Paper

Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application
Author(s): Jyotika Jogi; Sujata Pandey; R. S. Gupta
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Paper Abstract

This paper analyses the temperature dependence of device characteristics. The degradation of the device performance due to thermal stress has been explained in detail. The paper also includes a theoretical explanation to the significant temperature effects on transconductance and cut off frequency for microwave frequency application.

Paper Details

Date Published: 7 April 2004
PDF: 4 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560662
Show Author Affiliations
Jyotika Jogi, Univ. of Delhi South Campus (India)
Sujata Pandey, Amity School of Engineering and Technology (India)
R. S. Gupta, Univ of Delhi South Campus (India)


Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

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