Share Email Print

Proceedings Paper

Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping
Author(s): Thoralf Gebel; Lars Rebohle; Rossen A. Yankov; Alexi N. Nazarov; Wolfgang Skorupa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Integrated optoelectronic devices are expected to become a key component of the future microelectronic and communication technology. This has led to great interest in the development of silicon-based light emitters. One of the most promising techniques for fabricating such emitters uses ion-beam synthesis (IBS) to form semiconductor nanoclusters in a layer of thermally-grown silicon dioxide. Following the preparation of metal-oxide-semiconductor (MOS) structures incorporating nanocluster-rich oxide layers, blue-to-violet electroluminescence (EL) has been observed at room temperature (RT) for implants using germanium ions and heat treatments involving furnace and/or rapid thermal processing. The power efficiency of the EL is quite high, up to 5 x 10-3, making the blue/violet light emission visible with the naked eye. It has been proven that light emission is caused by one and the same luminescent center. The microstructure of the ion-implanted and annealed oxide layers has been characterized by cross-sectional transmission electron microscopy (XTEM). The presence of second-phase nanoclusters has been found to modify considerably the charge injection and charge transport in the oxide. The optical properties of the nanocluster-rich oxide layers have been correlated with the process of charge trapping using a combination of current-voltage (I/V) and capacitance-voltage (C/V) measurements. The results obtained have enabled the nature of the EL to be elucidated. Finally, opto- and microelectronic application aspects are outlined.

Paper Details

Date Published: 7 April 2004
PDF: 6 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560661
Show Author Affiliations
Thoralf Gebel, Nanoparc GmbH (Germany)
Lars Rebohle, Nanoparc GmbH (Germany)
Rossen A. Yankov, Nanoparc GmbH (Germany)
Alexi N. Nazarov, Institute of Semiconductor Physics (Ukraine)
Wolfgang Skorupa, Nanoparc GmbH (Germany)
Forschungszentrum Rossendorf e.V. (Germany)

Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

© SPIE. Terms of Use
Back to Top