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Proceedings Paper

Temperature behavior of exciton absorption bands in layer semiconductors
Author(s): V. M. Kramar; N. K. Kramar; Bohdan M. Nitsovich
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Paper Abstract

The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals had been investigated. The effective mass of the current carriers in the layer semiconductor PbI2 has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorptions peak shift and existence of inversion points is related with the concurrent influence of two exciton energy relaxation mechanisms -- on both the bending waves and the lattice phonons.

Paper Details

Date Published: 4 June 2004
PDF: 10 pages
Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.560054
Show Author Affiliations
V. M. Kramar, Chernivtsi National Univ. (Ukraine)
N. K. Kramar, Chernivtsi National Univ. (Ukraine)
Bohdan M. Nitsovich, Chernivtsi National Univ. (Ukraine)

Published in SPIE Proceedings Vol. 5477:
Sixth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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