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Proceedings Paper

Atomistic studies of thin film growth
Author(s): Talat S. Rahman; Chandana Gosh; Oleg Trushin; Abdelkader Kara; Altaf Karim
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Paper Abstract

We present here a summary of some recent techniques used for atomistic studies of thin film growth and morphological evolution. Specific attention is given to a new kinetic Monte Carlo technique in which the usage of unique labeling schemes of the environment of the diffusing entity allows the development of a closed data base of 49 single atom diffusion processes for periphery motion. The activation energy barriers and diffusion paths are calculated using reliable manybody interatomic potentials. The application of the technique to the diffusion of 2-dimensional Cu clusters on Cu(111) shows interesting trends in the diffusion rate and in the frequencies of the microscopic mechanisms which are responsible for the motion of the clusters, as a function of cluster size and temperature. The results are compared with those obtained from yet another novel kinetic Monte Carlo technique in which an open data base of the energetics and diffusion paths of microscopic processes is continuously updated as needed. Comparisons are made with experimental data where available.

Paper Details

Date Published: 2 August 2004
PDF: 14 pages
Proc. SPIE 5509, Nanomodeling, (2 August 2004); doi: 10.1117/12.560016
Show Author Affiliations
Talat S. Rahman, Kansas State Univ. (United States)
Chandana Gosh, Kansas State Univ. (United States)
Oleg Trushin, Institute of Microelectronics and Informatics (Russia)
Abdelkader Kara, Kansas State Univ. (United States)
Altaf Karim, Kansas State Univ. (United States)

Published in SPIE Proceedings Vol. 5509:
Akhlesh Lakhtakia; Sergey A. Maksimenko, Editor(s)

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