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Proceedings Paper

Fabrication of SiC:Ge: waveguide wavelength selector using ion implantation and laser deposition techniques
Author(s): Abdalla M. Darwish; Brent D. Koplitz; Nadia Majeed; Trivia Frazier; Robert Combs; Daryush Ila; Nikolai V. Kukhtarev
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Paper Abstract

A waveguid-wavelength selector was fabricated using ion implanted SiC substrate and Ga/Ge thin film using laser ablation techniques. The device was used as a CO2 laser lines selector. The theory of the operation is based on visibility of the CO2 laser to produce a thermal grating which drives the optical selector with maximum efficiency of 46 MHz of laser offset between 10P20 and 10P18 CO2 laser lines. The threshold of the thermal damage of the device was overcomed using a miniature heat exchanger, which is triggered by the excess of the thermal heat during the operation. The different potential use of the device will be presented as well.

Paper Details

Date Published: 22 October 2004
PDF: 15 pages
Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); doi: 10.1117/12.559927
Show Author Affiliations
Abdalla M. Darwish, Dillard Univ. (United States)
Laser Matter Research Lab. (United States)
Brent D. Koplitz, Tulane Univ. (United States)
Nadia Majeed, Dillard Univ. (United States)
Trivia Frazier, Dillard Univ. (United States)
Robert Combs, Tulane Univ. (United States)
Daryush Ila, Alabama A&M Univ. (United States)
Nikolai V. Kukhtarev, Alabama A&M Univ. (United States)


Published in SPIE Proceedings Vol. 5560:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X
Francis T. S. Yu; Ruyan Guo; Shizhuo Yin, Editor(s)

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