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Proceedings Paper

Direct index of refraction measurement of silicon and ruthenium at EUV wavelengths
Author(s): Kristine Rosfjord; Chang Chang; David T. Attwood
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Paper Abstract

The use of coherent radiation from undulator beamlines has been used to directly measure the real and imaginary parts of the index of refraction of several metals1. Here we extend the same interferometric technique to slightly higher energies, and measure the indices of refraction of silicon and ruthenium, essential materials for extreme ultraviolet (EUV) lithography. Both materials are tested at-wavelength (13.4 nm.) Silicon is also measured about its L2 (99.8 eV) and L3 (99.2 eV) absorption edges. This measurement technique is currently being expanded further to soft X-ray wavelengths.

Paper Details

Date Published: 14 October 2004
PDF: 4 pages
Proc. SPIE 5538, Optical Constants of Materials for UV to X-Ray Wavelengths, (14 October 2004); doi: 10.1117/12.559815
Show Author Affiliations
Kristine Rosfjord, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)
Chang Chang, Drexel Univ. (United States)
David T. Attwood, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 5538:
Optical Constants of Materials for UV to X-Ray Wavelengths
Regina Soufli; John F. Seely, Editor(s)

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