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Proceedings Paper

Local photoluminescence measurements of semiconductor surface defects
Author(s): Pavel Tomanek; Marketa Benesova; Pavel Dobis; Jitka Bruestlova; Nadezda Uhdeova
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Paper Abstract

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods -- widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

Paper Details

Date Published: 4 June 2004
PDF: 7 pages
Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.559784
Show Author Affiliations
Pavel Tomanek, Brno Univ. of Technology (Czech Republic)
Marketa Benesova, Brno Univ. of Technology (Czech Republic)
Pavel Dobis, Brno Univ. of Technology (Czech Republic)
Jitka Bruestlova, Brno Univ. of Technology (Czech Republic)
Nadezda Uhdeova, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 5477:
Sixth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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