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Proceedings Paper

Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography
Author(s): V. P. Makhniy; Ya. M. Barasyuk; M. V. Demych; Ye. V. Stets; O. I. Yanchuk
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Paper Abstract

The basic photo-electric properties of contacts of oxide semiconductor (In2O3, SnO2, ITO) with cadmium telluride and with indium selenide are analyzed from the point of view of their use as photodetectors for an optical tomography.

Paper Details

Date Published: 4 June 2004
PDF: 4 pages
Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.559761
Show Author Affiliations
V. P. Makhniy, Chernivtsi National Univ. (Ukraine)
Ya. M. Barasyuk, Chernivtsi National Univ. (Ukraine)
M. V. Demych, Chernivtsi National Univ. (Ukraine)
Ye. V. Stets, Chernivtsi National Univ. (Ukraine)
O. I. Yanchuk, Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5477:
Sixth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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