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Proceedings Paper

A fast optical scanning deflectometer for measuring the topography of large silicon wafers
Author(s): Stefan Krey; Willem D. van Amstel; Konrad Szwedowicz; Juan Campos; Alfonso Moreno; Erik Jan Lous
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Paper Abstract

A compact scanning deflectometer is presented for the fast topography measurement of semiconductor wafers. The technique, however, is equally well suited for any flat or slightly curved specular reflective surface. The measurement principle is based on the 2D measurement of the local slope vector by means of a narrow Laser beam scanning rapidly across the sample surface. The fast linear scanning is combined with sample rotation to measure the complete surface of circular samples. There is no physical contact to the measured surface. The topography of the sample is derived from the slope data by a novel 2D integration method, which is robust with respect to noise in the slope signals. We present the full-size topography of unpatterned and patterned wafers of different polishing quality.

Paper Details

Date Published: 14 October 2004
PDF: 11 pages
Proc. SPIE 5523, Current Developments in Lens Design and Optical Engineering V, (14 October 2004); doi: 10.1117/12.559702
Show Author Affiliations
Stefan Krey, Trioptics GmbH (Germany)
Willem D. van Amstel, Philips CFT (Netherlands)
Konrad Szwedowicz, Philips CFT (Netherlands)
Juan Campos, Univ. Autonoma de Barcelona (Spain)
Alfonso Moreno, Univ. Autonoma de Barcelona (Spain)
Erik Jan Lous, Philips Semiconductors B.V. (Netherlands)

Published in SPIE Proceedings Vol. 5523:
Current Developments in Lens Design and Optical Engineering V
Pantazis Z. Mouroulis; Warren J. Smith; R. Barry Johnson, Editor(s)

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