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Proceedings Paper

Optimization of double-barrier-doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET
Author(s): G. B. Galiev; V. E. Kaminskii; Vladimir A. Kul'bachinskii
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Paper Abstract

The conductivity and Hall mobility have been measured in heterostructures with quantum well (QW) as functions of temperature and the QW width. If a tunnel-transparent barrier is inserted in the middle of a QW, the mobility increases in narrow wells and decreases in wide wells. The experimental data have been compared with the calculated dependences. It has been shown that the number of filled quantum well subbands depends on the well width and the presence of a barrier.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558789
Show Author Affiliations
G. B. Galiev, Institute of Radio Engineering and Electronics (Russia)
V. E. Kaminskii, Institute of Radio Engineering and Electronics (Russia)
Vladimir A. Kul'bachinskii, M.V. Lomonosov Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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