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Proceedings Paper

Diffusive and ballistic regimes for transfer resistances
Author(s): Valery Yu. Vinnichenko; Anatoly V. Chernikh; Gennady M. Mikhailov
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Paper Abstract

We investigated transfer resistance of single crystalline W (001) nanostructure in the temperature interval 4.2 - 295 K. It is found that the crossover from liquid - to gas-like flow electron transport takes place when electrode spacing is comparable to electron mean free path. Under diffusive electron transport both positive and negative signs of the transfer resistance are observed in the depending on the geometry of applied current. The latter is not found at ballistic electron transport. Transfer resistances change faster than liner dependence against the reversal electron mean free path.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558777
Show Author Affiliations
Valery Yu. Vinnichenko, Institute of Microelectronics Technology and High Purity Materials (Russia)
Anatoly V. Chernikh, Institute of Microelectronics Technology and High Purity Materials (Russia)
Gennady M. Mikhailov, Institute of Microelectronics Technology and High Purity Materials (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003

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