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Proceedings Paper

New peculiarities of interband tunneling in broken-gap heterostructures
Author(s): A. Zakharova; S. T. Yen; K. A. Chao
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Paper Abstract

We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558531
Show Author Affiliations
A. Zakharova, Institute of Physics and Technology (Russia)
S. T. Yen, National Chiao Tung Univ. (Taiwan)
K. A. Chao, Lund Univ. (Sweden)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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