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Proceedings Paper

The optimization of relative current sensitivity of bipolar magnetotransistor
Author(s): A. V. Kozlov; M. A. Reveleva; R. D. Tikhonov
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Paper Abstract

Using the methods of numerical device-and-process simulation we investigated the current distribution and the relative and absolute current sensitivity of the lateral bipolar dual-collector magnetotransistor (BMT) made in the diffusion well and with the substrate and well contacts connected. The analysis of the current flow at low injection level revealed the negative sensitivity mechanism. The negative relative current sensitivity appears in BMT as a result of the involved in recombination electron and hole flows redistribution induced by magnetic field, i.e., as the result of concentration-recombination mechanism of magnetosensitivity. The optimization of structure of BMT allows to increase the maximal meaning of relative current sensitivity approximately three times.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558445
Show Author Affiliations
A. V. Kozlov, Moscow Institute of Electronic Technology (Russia)
M. A. Reveleva, Moscow Institute of Electronic Technology (Russia)
R. D. Tikhonov, Moscow Institute of Electronic Technology (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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