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Proceedings Paper

Investigation of the mode-locked regime in a diode laser by microwave pumping at a current close to the generation threshold
Author(s): Sergei N. Bagaev; S. V. Chepurov; V. M. Klementyev; A. V. Kashirsky; S. A. Kuznetsov; V. S. Pivtsov; V. F. Zakharyash
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Paper Abstract

In this paper, some results of experimental investigations of conditions of the mode-locked regime obtained by microwave pumping in a diode laser with an external cavity are presented. It was observed that the mode-locked regime is achieved at certain power levels of the microwave oscillator at pumping currents close to the generation threshold.

Paper Details

Date Published: 3 May 2004
PDF: 5 pages
Proc. SPIE 5480, Laser Optics 2003: Diode Lasers and Telecommunication Systems, (3 May 2004); doi: 10.1117/12.558414
Show Author Affiliations
Sergei N. Bagaev, Institute of Laser Physics (Russia)
S. V. Chepurov, Institute of Laser Physics (Russia)
V. M. Klementyev, Institute of Laser Physics (Russia)
A. V. Kashirsky, Institute of Laser Physics (Russia)
S. A. Kuznetsov, Institute of Laser Physics (Russia)
V. S. Pivtsov, Institute of Laser Physics (Russia)
V. F. Zakharyash, Institute of Laser Physics (Russia)


Published in SPIE Proceedings Vol. 5480:
Laser Optics 2003: Diode Lasers and Telecommunication Systems
Nikolay N. Rozanov; Sergey A. Gurevich, Editor(s)

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