Share Email Print
cover

Proceedings Paper

Influence of cells-MOSFETs (with Schottky barrier drain contact) location in power IC on electrical device characteristics
Author(s): M. Korolev; Anton Krasukov; R. Tihonov
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper presents a two-dimensional numerical analysis of planar power n-channel MOSFET structure with Schottky-barrier drain contact. A comparison in I-V characteristics between the Lateral Power MOSFET with Schottky-barrier drain contact and the conventional Lateral Power MOSFET with ohmic drain contact structures is given. The thyristor like I-V characteristics of the Lateral Power MOSFET with Schottky-barrier drain contact are found to be dependent of substrate contact location and neighboring cells interaction.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558410
Show Author Affiliations
M. Korolev, Moscow Institute of Electronic Technology (Russia)
Anton Krasukov, Moscow Institute of Electronic Technology (Russia)
R. Tihonov, Moscow Institute of Electronic Technology (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top