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Proceedings Paper

Surface morphology transitions induced by ion beam action during Ge/Si MBE
Author(s): Anatoly V. Dvurechenskii; J. V. Smagina; V. A. Zinovyev; V. A. Armbrister; S. A. Teys; A. K. Gutakovskii
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Paper Abstract

Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) experiments were performed to study growth modes induced by hyperthermal Ge+ ion action during molecular beam epitaxy (MBE) of Ge on Si(100). The continuous and pulsed ion beams were used. These studies have shown that ion-beam action during heteroepitaxy leads to decrease in critical film thickness for transition from two-dimensional (2D) to three-dimensional (3D) growth modes, enhancement of 3D island density and narrowing of island size distribution, as compared with conventional MBE experiments. Moreover, it was found that ion beam assists the transition from hut to dome shaped Ge islands on Si(100).

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558329
Show Author Affiliations
Anatoly V. Dvurechenskii, Institute of Semiconductor Physics (Russia)
J. V. Smagina, Institute of Semiconductor Physics (Russia)
V. A. Zinovyev, Institute of Semiconductor Physics (Russia)
V. A. Armbrister, Institute of Semiconductor Physics (Russia)
S. A. Teys, Institute of Semiconductor Physics (Russia)
A. K. Gutakovskii, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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