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Proceedings Paper

Selective growth of oriented carbon nanotubes
Author(s): Sergey A. Gavrilov; N. N. Dzbanovsky; V. V. Dvorkin; E. A. Il'ichev; B. K. Medvedev; Eduard A. Poltoratsky; G. S. Rychkov; Nikolay V. Suetin
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Paper Abstract

Two different ways of oriented carbon nanotube (CNT) selective growth are investigated. At first, template assisted vertical oriented CNT formation is used. We developed a process of individual (isolated) CNT growth in porous anodic alumina at position determined by nanoimprinting. Additionally a new fabrication method of planar nanoelements based on carbon nanotubes is described. The prototypes of nanoelements using an autoemission are designed and experimentally realized. Obtained electric field thresholds are less than 3V/μm.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557977
Show Author Affiliations
Sergey A. Gavrilov, Moscow Institute of Electronic Technology (Russia)
N. N. Dzbanovsky, M.V. Lomonosov Moscow State Univ. (Russia)
V. V. Dvorkin, M.V. Lomonosov Moscow State Univ. (Russia)
E. A. Il'ichev, Institute of Physical Problems (Russia)
B. K. Medvedev, Institute of Physical Problems (Russia)
Eduard A. Poltoratsky, Institute of Physical Problems (Russia)
G. S. Rychkov, State Research Institute of Physical Problems (Russia)
Nikolay V. Suetin, M.V. Lomonosov Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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