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Proceedings Paper

The strain distribution in Si lattice of the layer containing β-FeSi2 precipitates
Author(s): A. F. Borun; N. P. Khmelnitskaja; Yu. N. Parkhomenko; E. G. Polyakova; E. A. Vygovskaja
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Paper Abstract

On the base of the transmission electron microscopy with super-high resolution (STEM) data the behavior of the Si lattice parameters in the surroundings of β-FeSi2 precipitates formed by ion beam synthesis (IBS) method. Despite the fact that the spots observable on the STEM image obviously are not the images of lattice atoms, the measuring of the distances between them permits to get some information about the parameters of the Si lattice in the (110)Si cross-section. Namely, it appears that β-FeSi2 precipitates formed by the way specified above are not subjected to any substantial tensions. The important changes of lattice parameters detected are connected with a number of the defects more local. Particularly, dislocations can act as such defects.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557967
Show Author Affiliations
A. F. Borun, Moscow Institute of Steel and Alloys (Russia)
N. P. Khmelnitskaja, Moscow Institute of Steel and Alloys (Russia)
Yu. N. Parkhomenko, Moscow Institute of Steel and Alloys (Russia)
E. G. Polyakova, Moscow Institute of Steel and Alloys (Russia)
E. A. Vygovskaja, Moscow Institute of Steel and Alloys (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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