Share Email Print
cover

Proceedings Paper

Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate
Author(s): V. V. Starkov; Eugene Yu. Gavrilin; Anatoli F. Vyatkin; Vladimir I. Emel'yanov; K. Eremin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A gradual transition from quasi-hexagonal to quasi-one dimensional pore distribution during deep anodic etching of a uniaxially stressed silicon plate was experimentally observed to increase with mechanical loading.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557928
Show Author Affiliations
V. V. Starkov, Institute of Microelectronics Technology (Russia)
Eugene Yu. Gavrilin, Institute of Microelectronics Technology (Russia)
Anatoli F. Vyatkin, Institute of Microelectronics Technology (Russia)
Vladimir I. Emel'yanov, M.V. Lomonosov Moscow State Univ. (Russia)
K. Eremin, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top