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Proceedings Paper

Polycrystalline silicon for semiconductor devices
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Paper Abstract

The optical properties of polycrystalline silicon films with oxygen incorporation in grain boundary were experimentally studied. The Raman scattering photoluminescent and Fourier-transformed infrared spectra were measured. The morphology of the films were studied by atomic force microscopy. The strong correlation between the oxygen content and optical properties, and polarization was found. The oxygen diffuse incorporation corresponds the energetic levels in band gap around Ec-0.27 eV. The thermal annealing of polycrystalline film by the temperature more than 150° C produces the siloxane bonding with defect level in energy diagram near Ec-0.14 eV. The quantum beats of intensity of optical and electronic signal due to the quantum interference of closed electronic states was studied.

Paper Details

Date Published: 28 May 2004
PDF: 11 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557920
Show Author Affiliations
Dmitri E. Milovzorov, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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