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Proceedings Paper

Macroporous silicon: material science and technology
Author(s): Anatoli F. Vyatkin
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Paper Abstract

Macroporous silicon is a material which widely extends the traditional application areas of silicon from modern microelectronics to optoelectronics, microphotonics, micromechanics, sensorics, etc. Macroporous silicon is a material produced from silicon (100) single crystal wafers. It is characterized by an array of straight pores penetrating from a top to a bottom of the wafer along, as a rule, <100> direction. The array of the ordered or randomly nucleated macropores is normally produced by means of electrochemical etching of the silicon wafer with preliminary formed inverse pyramides using lithographic technique or directly on a top of the untreated wafers, respectively. Parameters of the macropores produced (a pore size and a pore wall thickness) was found to depend in a high extent on the silicon doping level, e.g. the lower concentration of doping impurities the larger pore sizes can be obtained. It was shown as well that a randomly nucleated pore growth is a two-stage process comprising a pore nucleation stage and an in depth pore growth stage. The first stage is a critical one which determines a density of the pores finally produced. Two different models of the nucleation stage has been proposed and discussed in the present work. Taking into account the main conclusions of the models a new technique based on fine focused ion beam implantation has been developed to produce an array of the ordered macropores with submicron sizes.

Paper Details

Date Published: 28 May 2004
PDF: 5 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557901
Show Author Affiliations
Anatoli F. Vyatkin, Institute of Microelectronics Technology (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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