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Paper Abstract

EUVL mask process of absorber layer dry etching and defect repair were evaluated. TaGeN and Cr were selected for absorber layer and buffer layer, respectively. These absorber layer and buffer layer were coated on 6025 Qz substrate. Two dry etching processes were evaluated for absorber layer etching. One is CF4 gas process and the other is Cl2 gas process. CD uniformity, selectivity, cross section profile and resist damage were evaluated for each process. FIB-GAE and AFM machining were applied for absorber layer repair test. XeF2 gas was used for FIB-GAE. Good selectivity between absorber layer and buffer layer was obtained using XeF2 gas. However, XeF2 gas causes side etching of TaGeN layer. AFM machining repair technique was demonstrated for TaGeN layer repair.

Paper Details

Date Published: 20 August 2004
PDF: 9 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557817
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Masaharu Nishiguchi, Dai Nippon Printing Co., Ltd. (Japan)
Tsuyoshi Amano, Dai Nippon Printing Co., Ltd. (Japan)
Toshiaki Motonaga, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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